Title :
IVB-1 degradation of I-V characteristics due to the drain-gate-substrate interaction in MOSFETs
Author :
Ng, Kang Kee ; Taylor, Graham W.
fDate :
10/1/1981 12:00:00 AM
Keywords :
Breakdown voltage; Capacitance-voltage characteristics; Degradation; Effective mass; Hot carriers; Laboratories; MOSFETs; Silicon compounds; Stress; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20558
