Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition

Recently Ga1-xAlxAs-GaAs double-heterostructure lasers having low threshold current densities have been grown by metalorganic chemical vapor deposition. In addition to these conventional double-heterostructure lasers, unique laser structures have been grown, e.g., channel-guide, distributed-Bragg-confinement, and single- and multiple-quantum-well lasers. We describe here the preparation and performance of these devices.