Title :
IVB-5 fatigued-induced defects in MNOS devices
Author :
Ko, C.K. ; Senturia, S.D. ; Burns, J.A.
Author_Institution :
Massachusetts Institute of Technology, Cambridge, MA
fDate :
10/1/1981 12:00:00 AM
Keywords :
Capacitors; Electric variables; Etching; Fatigue; History; Laboratories; Optical microscopy; Scanning electron microscopy; Silicon; Stress;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20562
