Title :
IVB-6 effects of grain boundaries on laser crystallized poly-Si MOSFETs
Author :
Ng, Kang Kee ; Celler, G.K. ; Frye, R.C. ; Sze, Simon M.
fDate :
10/1/1981 12:00:00 AM
Keywords :
Annealing; Crystallization; Electron mobility; Grain boundaries; Grain size; Laboratories; Leakage current; MOSFETs; Optical materials; X-ray lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20563
