DocumentCode

1075969

Title

IVB-6 effects of grain boundaries on laser crystallized poly-Si MOSFETs

Author

Ng, Kang Kee ; Celler, G.K. ; Frye, R.C. ; Sze, Simon M.

Volume

28

Issue

10

fYear

1981

fDate

10/1/1981 12:00:00 AM

Firstpage

1240

Lastpage

1240

Keywords

Annealing; Crystallization; Electron mobility; Grain boundaries; Grain size; Laboratories; Leakage current; MOSFETs; Optical materials; X-ray lasers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1981.20563

Filename

1481715