• DocumentCode
    1076020
  • Title

    Superconducting Properties of MgB2: Polycarbosilane Versus Conventional Nano-SiC Doping

  • Author

    Shcherbakova, O.V. ; Pan, A.V. ; Wexler, D. ; Dou, S.X.

  • Author_Institution
    Univ. of Wollongong, Wollongong
  • Volume
    17
  • Issue
    2
  • fYear
    2007
  • fDate
    6/1/2007 12:00:00 AM
  • Firstpage
    2790
  • Lastpage
    2793
  • Abstract
    The effect of polycarbosilane (PCS) doping on the superconducting properties of MgB2 was systematically investigated. Highly reactive C and Si appeared after PCS decomposition facilitating incorporation of C into the MgB2 lattice, as well as the reaction between Si and Mg, resulting in formation of a large number of small Mg2Si particles within MgB2 grains. C-substitution induced crystal lattice defects and impurities act as strong pinning centers, significantly improving Jc(Ba) performance in the high field region. The differences in the effects of SiC and PCS doping have been studied and are described to the structural transformation that occurs in MgB2 after doping with these two materials.
  • Keywords
    critical current density (superconductivity); doping; flux pinning; impurities; magnesium compounds; organic compounds; silicon compounds; solid-state phase transformations; MgB2:SiC; crystal lattice defects; decomposition; impurities; nanoSiC doping; pinning centers; polycarbosilane doping; structural transformation; superconducting material; Australia; Chemical elements; Doping; Lattices; Oxidation; Personal communication networks; Powders; Silicon carbide; Superconducting materials; Temperature;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/TASC.2007.898950
  • Filename
    4278269