DocumentCode
1076020
Title
Superconducting Properties of MgB2: Polycarbosilane Versus Conventional Nano-SiC Doping
Author
Shcherbakova, O.V. ; Pan, A.V. ; Wexler, D. ; Dou, S.X.
Author_Institution
Univ. of Wollongong, Wollongong
Volume
17
Issue
2
fYear
2007
fDate
6/1/2007 12:00:00 AM
Firstpage
2790
Lastpage
2793
Abstract
The effect of polycarbosilane (PCS) doping on the superconducting properties of MgB2 was systematically investigated. Highly reactive C and Si appeared after PCS decomposition facilitating incorporation of C into the MgB2 lattice, as well as the reaction between Si and Mg, resulting in formation of a large number of small Mg2Si particles within MgB2 grains. C-substitution induced crystal lattice defects and impurities act as strong pinning centers, significantly improving Jc(Ba) performance in the high field region. The differences in the effects of SiC and PCS doping have been studied and are described to the structural transformation that occurs in MgB2 after doping with these two materials.
Keywords
critical current density (superconductivity); doping; flux pinning; impurities; magnesium compounds; organic compounds; silicon compounds; solid-state phase transformations; MgB2:SiC; crystal lattice defects; decomposition; impurities; nanoSiC doping; pinning centers; polycarbosilane doping; structural transformation; superconducting material; Australia; Chemical elements; Doping; Lattices; Oxidation; Personal communication networks; Powders; Silicon carbide; Superconducting materials; Temperature;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2007.898950
Filename
4278269
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