Title :
VA-3 novel microwave medium power GaAs MESFET with Schottky drain
fDate :
10/1/1981 12:00:00 AM
Keywords :
Bipolar transistors; FETs; Fabrication; Gallium arsenide; MESFETs; Metallization; Microwave devices; Power generation; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20568
