DocumentCode :
1076025
Title :
Germanium on Silicon for Near-Infrared Light Sensing
Author :
Colace, Lorenzo ; Assanto, Gaetano
Author_Institution :
NooEL-Nonlinear Opt. & Optoelectron. Lab., Univ. Roma Tre, Rome, Italy
Volume :
1
Issue :
2
fYear :
2009
Firstpage :
69
Lastpage :
79
Abstract :
We review near-infrared detectors in germanium grown on silicon. We discuss pn and pin photodiodes based on Ge deposited on Si by a number of techniques, including thermal evaporation; the optical and electronic characterization of Ge-on-Si heterostructures using various approaches to minimize the density of defects; and compatibility issues with standard fabrication processes for Si electronics. We describe in greater detail the most promising devices realized by us and operating either at normal incidence or in guided-wave geometries, with applications to high-speed optical receivers, as well as image sensors.
Keywords :
elemental semiconductors; germanium; infrared detectors; photodetectors; photodiodes; semiconductor heterojunctions; silicon; Ge-Si; defect density; heterostructures; near-infrared detectors; near-infrared light sensing; pin photodiode; pn photodiode; Detectors; Geometrical optics; Germanium; High speed optical techniques; Image sensors; Optical device fabrication; Optical receivers; Optical sensors; Photodiodes; Silicon; Germanium; Si-based optoelectronics; near infrared; photodetectors;
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2009.2025516
Filename :
5075653
Link To Document :
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