Title :
Extreme Value Statistics in Silicon Photonics
Author :
Borlaug, D. ; Fathpour, S. ; Jalali, B.
Author_Institution :
Electr. Eng. Dept., Univ. of California, Los Angeles, CA, USA
fDate :
6/1/2009 12:00:00 AM
Abstract :
L-shape probability distributions are extremely non-Gaussian functions that have been surprisingly successful in describing the occurrence of extreme events ranging from stock market crashes, natural disasters, structure of biological systems, fractals, and optical rogue waves. We show that fluctuations in stimulated Raman scattering, as well as in coherent anti-Stokes Raman scattering, in silicon can follow extreme value statistics and provide mathematical insight into the origin of this behavior.
Keywords :
coherent antiStokes Raman scattering; integrated optics; photonic band gap; statistical distributions; L-shape probability distributions; coherent anti-Stokes Raman scattering; extreme value statistics; silicon photonics; stimulated Raman scattering; Biological systems; Computer crashes; Photonics; Probability distribution; Raman scattering; Silicon; Statistical distributions; Statistics; Stock markets; Ultraviolet sources; Extreme value statistics; L-shape probability distribution; Raman scattering; silicon photonics;
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2009.2025517
