Title :
VA-4 medium power GaAs bipolar transistors
Author :
Beneking, H. ; Su, Li
fDate :
10/1/1981 12:00:00 AM
Keywords :
Bipolar transistors; Dielectric losses; Etching; Fabrication; Frequency; Gallium arsenide; MISFETs; Temperature dependence; Time measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20570