Title :
VA-6 a planar ion-implanted GaAs MISFET with almost hysteresis-free characteristics
Author :
Yu, J.G. ; Ruttan, T.G.
fDate :
10/1/1981 12:00:00 AM
Keywords :
Capacitance-voltage characteristics; Electrons; Fabrication; Frequency; Gallium arsenide; Hysteresis; Inverters; MISFETs; Plasma applications; Plasma properties;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20571
