Title :
Flash memory-magnetic disk replacement?
Author :
Barre, Anthony G.
Author_Institution :
Intel Corp., Folsom, CA, USA
fDate :
11/1/1993 12:00:00 AM
Abstract :
The author begins with an examination of the flash storage cell and how it works. From this one will be able to see the characteristics of flash and how they compare to the mass data storage requirements of portable computing
Keywords :
EPROM; integrated memory circuits; EPROM; flash memory; flash storage cell; magnetic disc replacement; mass data storage requirements; portable computing; Cities and towns; Delay; Electron traps; Flash memory; Flash memory cells; MOSFETs; Magnetic semiconductors; Nonvolatile memory; Voltage; Writing;
Journal_Title :
Magnetics, IEEE Transactions on
