Title :
VA-8 AlGaAs heterojunction gate GaAs FETs by organometallic and molecular beam epitaxy
Author :
Maloney, Timothy J.
fDate :
10/1/1981 12:00:00 AM
Keywords :
Bipolar transistors; Capacitance; Epitaxial growth; FETs; Frequency; Gallium arsenide; Heterojunctions; Molecular beam epitaxial growth; Threshold voltage; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20573
