• DocumentCode
    1076097
  • Title

    VA-9 high frequency low current GaAlAs-GaAs bipolar transistor

  • Author

    Ankri, D. ; Scavennec, A. ; Besombes, C. ; Courbet, C. ; Heliot, Fabien ; Riou, J.

  • Volume
    28
  • Issue
    10
  • fYear
    1981
  • fDate
    10/1/1981 12:00:00 AM
  • Firstpage
    1247
  • Lastpage
    1247
  • Keywords
    Bipolar transistors; Doping; Frequency; Geometry; Hafnium; Heterojunctions; Laboratories; Materials science and technology; Substrates; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20574
  • Filename
    1481726