DocumentCode :
1076097
Title :
VA-9 high frequency low current GaAlAs-GaAs bipolar transistor
Author :
Ankri, D. ; Scavennec, A. ; Besombes, C. ; Courbet, C. ; Heliot, Fabien ; Riou, J.
Volume :
28
Issue :
10
fYear :
1981
fDate :
10/1/1981 12:00:00 AM
Firstpage :
1247
Lastpage :
1247
Keywords :
Bipolar transistors; Doping; Frequency; Geometry; Hafnium; Heterojunctions; Laboratories; Materials science and technology; Substrates; Zinc;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20574
Filename :
1481726
Link To Document :
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