DocumentCode

1076177

Title

VIA-3 characteristics of pulsed laser annealed two micron channel length N-channel SOS transistor

Author

Chi, Yu Mike ; Gupta, Arpan ; Olson, G. ; Hess, L.D.

Volume

28

Issue

10

fYear

1981

fDate

10/1/1981 12:00:00 AM

Firstpage

1254

Lastpage

1255

Keywords

Annealing; CMOS technology; Electron mobility; Laboratories; Leakage current; MOSFETs; Optical device fabrication; Optical pulses; Semiconductor films; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1981.20583

Filename

1481735