Title :
VIA-3 characteristics of pulsed laser annealed two micron channel length N-channel SOS transistor
Author :
Chi, Yu Mike ; Gupta, Arpan ; Olson, G. ; Hess, L.D.
fDate :
10/1/1981 12:00:00 AM
Keywords :
Annealing; CMOS technology; Electron mobility; Laboratories; Leakage current; MOSFETs; Optical device fabrication; Optical pulses; Semiconductor films; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20583
