DocumentCode

1076204

Title

VIA-5 deep levels in ion-implanted Si after beam annealing

Author

Sheng, N.H. ; Mizuta, M. ; Merz, J.L.

Volume

28

Issue

10

fYear

1981

fDate

10/1/1981 12:00:00 AM

Firstpage

1256

Lastpage

1256

Keywords

Annealing; Contacts; Electron traps; Ion beams; Ion implantation; Laser beams; Optical materials; Power lasers; Spectroscopy; Thermal force;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1981.20586

Filename

1481738