DocumentCode :
1076410
Title :
Azide-phenolic resin photoresists for deep UV lithography
Author :
Iwayanagi, Takao ; Kohashi, Takahiro ; Nonogaki, Saburo ; Matsuzawa, Toshiharu ; Douta, Kikuo ; Yanazawa, Hiroshi
Author_Institution :
Hitachi Ltd., Kokubunji, Tokyo, Japan
Volume :
28
Issue :
11
fYear :
1981
fDate :
11/1/1981 12:00:00 AM
Firstpage :
1306
Lastpage :
1310
Abstract :
A photosensitive composition, consisting of an aromatic azide compound (3,3´-diazidodiphenyl sulfone) and a phenolic resin (poly(p-vinylphenol)), called MRS-1, has been prepared and evaluated as a negative deep UV resist for high resolution lithography. Solubility of MRS-1 in an aqueous alkaline developer decreases upon exposure to deep UV radiation. The alkaline developer removes the unexposed areas of MRS-1 by an etching-type development process. No swelling-induced pattern deformation occurs, and images of submicrometer resolution are obtained. The resist is approximately two orders of magnitude more sensitive than PMMA(polymethyl methacrylate). The exposure time of 5 s is sufficient for deep UV contact printing using a 500-W Xe-Hg lamp. The resistance to dry etching of MRS-1 is comparable to that of conventional positive photoresists based on phenolic resin.
Keywords :
Dry etching; Image resolution; Infrared spectra; Lamps; Lithography; Printing; Resins; Resists; Solid state circuits; Spectroscopy;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20605
Filename :
1481757
Link To Document :
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