Title :
Photonic Properties of Er-Doped Crystalline Silicon
Author :
Vinh, Nguyen Quang ; Ha, Ngo Ngoc ; Gregorkiewicz, Tom
Author_Institution :
Van der Waals-Zeeman Inst., Univ. of Amsterdam, Amsterdam
fDate :
7/1/2009 12:00:00 AM
Abstract :
During the last four decades, a remarkable research effort has been made to understand the physical properties of Si:Er material, as it is considered to be a promising approach towards improving the optical properties of crystalline Si. In this paper, we present a summary of the most important results of that research. In the second part, we give a more detailed description of the properties of Si/Si:Er multinanolayer structures, which in many aspects represent the most advanced form of Er-doped crystalline Si with prospects for applications in Si photonics.
Keywords :
elemental semiconductors; erbium; multilayers; nanostructured materials; photoluminescence; semiconductor doping; silicon; Si:Er; doping; multinanolayer structures; optical properties; photoluminescence; photonic properties; semiconductors; Atom optics; CMOS technology; Crystallization; Erbium; Indium phosphide; Optical interconnections; Particle beam optics; Photonic crystals; Silicon; Stimulated emission; Erbium; excitation; luminescence; nanolayers; optical gain; photonic; radiative recombination; rare earth; silicon; terahertz; two-color spectroscopy;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/JPROC.2009.2018220