Title :
Multilevel resist for lithography below 100 nm
Author :
Howard, Richard E. ; Hu, Evelyn L. ; Jackel, Lawrence D.
Author_Institution :
Bell Laboratories, Holmdel, NJ
fDate :
11/1/1981 12:00:00 AM
Abstract :
Features as small as 25 nm have been made with electron-beam lithography using multilevel resists on thick silicon substrates. Liftoff patterning of metal lines and reactive ion etching of silicon have demonstrated the possibility of making device structures with lateral dimensions below 100 nm.
Keywords :
Biomembranes; Electron beams; Etching; Fabrication; Lithography; Optical scattering; Optical sensors; Resists; Silicon; X-ray scattering;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20617
