DocumentCode
1076530
Title
Multilevel resist for lithography below 100 nm
Author
Howard, Richard E. ; Hu, Evelyn L. ; Jackel, Lawrence D.
Author_Institution
Bell Laboratories, Holmdel, NJ
Volume
28
Issue
11
fYear
1981
fDate
11/1/1981 12:00:00 AM
Firstpage
1378
Lastpage
1381
Abstract
Features as small as 25 nm have been made with electron-beam lithography using multilevel resists on thick silicon substrates. Liftoff patterning of metal lines and reactive ion etching of silicon have demonstrated the possibility of making device structures with lateral dimensions below 100 nm.
Keywords
Biomembranes; Electron beams; Etching; Fabrication; Lithography; Optical scattering; Optical sensors; Resists; Silicon; X-ray scattering;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20617
Filename
1481769
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