DocumentCode
1076585
Title
Linewidth control in projection lithography using a multilayer resist process
Author
O´toole, Michael M. ; Liu, E. David ; Chang, Mark S.
Author_Institution
Hewlett Packard Laboratories, Palo Alto, CA
Volume
28
Issue
11
fYear
1981
fDate
11/1/1981 12:00:00 AM
Firstpage
1405
Lastpage
1410
Abstract
Linewidth control using a tri-layer resist system on wafers with topography is investigated. An absorbing dye is incorporated in the bottom layer to improve the usable resolution. Resist patterns of 1-µm lines and spaces over aluminized topography are demonstrated using a projection aligner. The advantages of a multilayer system are investigated using an exposure and development simulation program for optical lithography. The relative contributions of planarization and reflection suppression are discussed.
Keywords
Apertures; Focusing; Lithography; Nonhomogeneous media; Optical imaging; Optical reflection; Planarization; Polymers; Resists; Surface topography;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20622
Filename
1481774
Link To Document