• DocumentCode
    1076675
  • Title

    Internal photoemission in Ag-Al2O3-Al junctions

  • Author

    Guedes, J. M Pinto ; Slayman, Charles W. ; Gustafson, T. Kenneth ; Jain, Ravinder K.

  • Author_Institution
    Univ. of California, Berkeley, CA, USA
  • Volume
    15
  • Issue
    6
  • fYear
    1979
  • fDate
    6/1/1979 12:00:00 AM
  • Firstpage
    475
  • Lastpage
    481
  • Abstract
    We report a detailed study of the magnitude of the photon-induced current in Ag-Al2O3-Al metal-oxide-metal junctions as a function of photon energy and angle of incident radiation. Experimental observations and a theory based on vacuum photoemission are found to be in good agreement. Fast risetimes ( l\\sim50 ns) and linearity of the photocurrent with respect to incident power up to at least 10 kW/cm2are also reported.
  • Keywords
    MBM devices; Photoemission; Area measurement; Charge carrier processes; Charge measurement; Current measurement; Energy measurement; Photoconductivity; Photoelectricity; Position measurement; Q measurement; Thickness measurement;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1979.1070041
  • Filename
    1070041
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1076675