Title :
A model of a narrow-width MOSFET including tapered oxide and doping encroachment
Author :
Akers, Lex A. ; Beguwala, Moiz M E ; Custode, Frank Z.
Author_Institution :
Arizona State University, Tempe, AZ
fDate :
12/1/1981 12:00:00 AM
Abstract :
A closed-form analytical expression is developed to predict the threshold voltage of a narrow-width MOSFET. The analytical expression developed is the first to include the effects of a recessed tapered oxide, the depletion charge under the thick recessed field oxide due to gate contact overlap and field doping encroachment at the channel edges. The theory is compared with experimental results and the agreement is dose.
Keywords :
Capacitance; Closed-form solution; Doping; MOSFET circuits; Permittivity; Predictive models; Region 4; Semiconductor process modeling; Silicon; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20635
