DocumentCode
1076727
Title
A model of a narrow-width MOSFET including tapered oxide and doping encroachment
Author
Akers, Lex A. ; Beguwala, Moiz M E ; Custode, Frank Z.
Author_Institution
Arizona State University, Tempe, AZ
Volume
28
Issue
12
fYear
1981
fDate
12/1/1981 12:00:00 AM
Firstpage
1490
Lastpage
1495
Abstract
A closed-form analytical expression is developed to predict the threshold voltage of a narrow-width MOSFET. The analytical expression developed is the first to include the effects of a recessed tapered oxide, the depletion charge under the thick recessed field oxide due to gate contact overlap and field doping encroachment at the channel edges. The theory is compared with experimental results and the agreement is dose.
Keywords
Capacitance; Closed-form solution; Doping; MOSFET circuits; Permittivity; Predictive models; Region 4; Semiconductor process modeling; Silicon; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20635
Filename
1481787
Link To Document