DocumentCode :
1076737
Title :
Volterra series representation of a forward-biased p-i-n diode
Author :
Reiss, Wanda
Author_Institution :
Technical University of Gdańsk, Poland
Volume :
28
Issue :
12
fYear :
1981
fDate :
12/1/1981 12:00:00 AM
Firstpage :
1495
Lastpage :
1500
Abstract :
A nonlinear model is proposed for a forward-biased p-in diode controlled by an ac signal consisting of a group of sinusoidal signals. The model is applicable to these phases of diode operation where linearized basic physical equations are valid. Current-voltage relations have been obtained for junctions and the "i" region in the form of a Taylor series with frequency-dependent coefficients. The new model is valid for signal levels considerably exceeding those admissible for the known linear model [3], [4]. A new form of signal limiting condition, suitable for measurement verification and calculations, has been obtained. The Volterra series for the equations representing the diode has been found which correspond to the Taylor series obtained. The convergency condition for this series is identical to that for thel Taylor series. The conformability of measurement and calculation results fully testifies to the usefulness of the proposed model for nonlinear distortion analysis.
Keywords :
Attenuators; Charge carrier processes; Distortion measurement; Frequency; Nonlinear equations; P-i-n diodes; Semiconductor process modeling; Spontaneous emission; Taylor series; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20636
Filename :
1481788
Link To Document :
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