• DocumentCode
    1076799
  • Title

    Exchange coupling control and thermal endurance of synthetic antiferromagnet structures for MRAM

  • Author

    Pietambaram, Srinivas V. ; Janesky, Jason ; Dave, Renu W. ; Sun, J.J. ; Steiner, G. ; Slaughter, J.M.

  • Author_Institution
    Technol. Solutions, Freescale Semicond., Chandler, AZ, USA
  • Volume
    40
  • Issue
    4
  • fYear
    2004
  • fDate
    7/1/2004 12:00:00 AM
  • Firstpage
    2619
  • Lastpage
    2621
  • Abstract
    Synthetic antiferromagnet (SAF) structures are a key element of TMR and GMR read heads and MRAM devices. Control of the SAF coupling strength and thermal endurance are key issues for these technologies. We find that the coupling strength increases with stronger crystalline texture in polycrystalline NiFe SAFs, and, surprisingly, we observe a strong dependence on seed layer in amorphous CoFeB SAFs. We also have developed an analysis method for evaluating thermal endurance of SAFs and show that failure of the SAF can be modeled as a thermally activated diffusion process. The analysis is used to predict the time to failure at any temperature, thus allowing accelerated failure analysis for SAF-based devices. The stability improves dramatically with increasing Ru spacer thickness. The time to failure for typical NiFe SAFs was found to be >10 years at 120°C.
  • Keywords
    antiferromagnetic materials; giant magnetoresistance; magnetic storage; random-access storage; tunnelling magnetoresistance; 120 C; CoFeB; GMR read heads; MRAM devices; NiFe; SAF coupling strength; TMR read heads; amorphous CoFeB SAF; crystalline texture; exchange coupling control; magnetoresistive random access memory; polycrystalline NiFe SAF; synthetic antiferromagnet structures; thermal activation; thermal endurance; Amorphous materials; Antiferromagnetic materials; Couplings; Crystallization; Failure analysis; Giant magnetoresistance; Magnetic heads; Saturation magnetization; Temperature; Tunneling magnetoresistance; Exchange coupling; MRAM; SAF; magnetoresistive random access memory; structures; synthetic antiferromagnet; thermal activation; thermal endurance;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2004.834209
  • Filename
    1325587