• DocumentCode
    1076814
  • Title

    Ku-band flat-profile Si-IMPATT diodes with 10-percent efficiency

  • Author

    Leistner, D. ; Freyer, J.

  • Author_Institution
    Technische Universität München, München, Federal Republic of Germany
  • Volume
    28
  • Issue
    12
  • fYear
    1981
  • fDate
    12/1/1981 12:00:00 AM
  • Firstpage
    1553
  • Lastpage
    1554
  • Abstract
    The fabrication of n-type high-efficiency Si flat-profile IMPATT diodes for Ku-band frequencies is described. By variation of the length of the undepleted region, the use of low ohmic contacts, and the reduction of the substrate thickness an efficiency of more than 10 percent could be obtained.
  • Keywords
    Diodes; Etching; Fabrication; Frequency; Gallium arsenide; Gold; Ohmic contacts; Packaging; Substrates; Wire;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20644
  • Filename
    1481796
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1076814