DocumentCode
1076828
Title
A new theory of g-r and 1/f noise
Author
Suh, Chung Ha
Author_Institution
Hong-Ik University, Seoul, Korea
Volume
28
Issue
12
fYear
1981
fDate
12/1/1981 12:00:00 AM
Firstpage
1555
Lastpage
1557
Abstract
A new unified formulation for generation-recombination (g-r) and 1/
noise theory is attempted by introducing the total carrier number fluctuation mechanism via the trapping-detrapping processes between every discrete energy level in the conduction band and single degenerate traplevel without assuming the 1/τ distribution.
noise theory is attempted by introducing the total carrier number fluctuation mechanism via the trapping-detrapping processes between every discrete energy level in the conduction band and single degenerate traplevel without assuming the 1/τ distribution.Keywords
Area measurement; Circuit noise; Current density; Dark current; Lamps; Lighting; Photovoltaic cells; Silicon; Voltage measurement; Xenon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20646
Filename
1481798
Link To Document