DocumentCode :
1076828
Title :
A new theory of g-r and 1/f noise
Author :
Suh, Chung Ha
Author_Institution :
Hong-Ik University, Seoul, Korea
Volume :
28
Issue :
12
fYear :
1981
fDate :
12/1/1981 12:00:00 AM
Firstpage :
1555
Lastpage :
1557
Abstract :
A new unified formulation for generation-recombination (g-r) and 1/ 
noise theory is attempted by introducing the total carrier number fluctuation mechanism via the trapping-detrapping processes between every discrete energy level in the conduction band and single degenerate traplevel without assuming the 1/τ distribution.
noise theory is attempted by introducing the total carrier number fluctuation mechanism via the trapping-detrapping processes between every discrete energy level in the conduction band and single degenerate traplevel without assuming the 1/τ distribution.Keywords :
Area measurement; Circuit noise; Current density; Dark current; Lamps; Lighting; Photovoltaic cells; Silicon; Voltage measurement; Xenon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20646
Filename :
1481798
Link To Document :
