A new reference signal generation method for MRAM using a 90-degree rotated MTJ

Author

Jeong, W.C. ; Kim, Kinam ; Park, J.H. ; Jeong, C.W. ; Lee, E.Y. ; Oh, J.H. ; Jeong, G.T. ; Koh, G.H. ; Koo, H.C. ; Lee, S.-H. ; Lee, S.Y. ; Shin, J.M. ; Jeong, H.S. ; Kinam Kim

Author_Institution

Semicond. R&D Center, Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea

Volume

40

Issue

4

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

2628

Lastpage

2630

Abstract

A new reference signal generation method for high-density MRAM is reported. 0.4×0.8 μm² magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-μm CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state R_H and low-resistance state R_L regardless of applied voltage. When tested in 8×8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM.

Keywords

CMOS memory circuits; magnetic storage; random-access storage; tunnelling magnetoresistance; 0.24 micron; 90-degree rotated MTJ; CMOS technology; high-density MRAM; magnetic random access memory; magnetic tunnel junction; reference cell; reference signal generation; tunneling magnetoresistance; CMOS technology; Magnetic tunneling; Nonvolatile memory; Random access memory; Signal generators; Testing; Transistors; Tunneling magnetoresistance; Very large scale integration; Voltage; MRAM; MTJ; Magnetic tunnel junction; TMR; magnetic random access memory; reference cell; tunneling magnetoresistance;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2004.829328

Filename

1325590