Quaternary AIInGaN-based photodetectors

Author

Jhou, Y.D. ; Chang, S.J. ; Su, Y.K. ; Chen, C.H. ; Lee, H.C. ; Liu, C.H. ; Lee, Y.Y.

Author_Institution

Inst. of Microelectron. & Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan

Volume

2

Issue

1

fYear

2008

Firstpage

42

Lastpage

45

Abstract

The growth of quaternary AlInGaN epitaxial layer on GaN/sapphire substrates by metalorganic chemical vapour deposition is reported. It was found that AlInGaN layers were grown three dimensionally with rough surface at low temperatures and transferred to smooth two-dimensional growth at 860degC. It was also found that In mole fraction in the layers decreased significantly as the AlInGaN growth temperature was increased while Al composition ratio was much less temperature dependent. Furthermore, it was found that solar-blind metal-insulator-semiconductor photodetectors with AlInGaN layer prepared at 860degC could provide us a photocurrent-to-dark-current contrast ratio of 1.93X10⁴ and a UV-to-visible rejection ratio of 38.0.

Keywords

III-V semiconductors; MIS devices; MOCVD; aluminium compounds; dark conductivity; gallium compounds; indium compounds; photodetectors; semiconductor epitaxial layers; wide band gap semiconductors; AlGaInN; GaN-Al₂O₃; UV-to-visible rejection ratio; composition ratio; growth temperature; metalorganic chemical vapour deposition; photocurrent-to-dark-current contrast ratio; quaternary epitaxial layer; sapphire substrates; solar-blind metal-insulator-semiconductor photodetectors; temperature 860 degC;

fLanguage

English

Journal_Title

Optoelectronics, IET

Publisher

iet

ISSN

1751-8768

Type

jour

DOI

10.1049/iet-opt:20070020

Filename

4455553