• DocumentCode
    1076864
  • Title

    III-V alloy heterostructure high speed avalanche photodiodes

  • Author

    Law, H. David ; Nakano, Kenichi ; Tomasetta, Louis R.

  • Author_Institution
    Rockwell International Science Center, Thousand Oaks, CA, USA
  • Volume
    15
  • Issue
    7
  • fYear
    1979
  • fDate
    7/1/1979 12:00:00 AM
  • Firstpage
    549
  • Lastpage
    558
  • Abstract
    Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaSb, GaAlAsSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 \\to 1.8 \\mu m. Early stages of development show very encouraging results. High speed response of <35 ps and high quantum efficiency >95 percent have been obtained. The dark currents and the excess avalanche noise will also be discussed. A direct comparison of GaAlSb, GaAlAsSb, and InGaAsP avalanche photodiodes is given.
  • Keywords
    Avalanche photodiodes; Bibliographies; Gallium materials/devices; Infrared detectors; Avalanche photodiodes; Dark current; Diodes; Fiber lasers; Gallium arsenide; Germanium alloys; III-V semiconductor materials; Laser noise; Pulse measurements; Silicon;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1979.1070061
  • Filename
    1070061
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1076864