Title :
Theoretical and experimental study of threshold characteristics in InGaAsP/InP DH lasers
Author :
Yano, Mitsuhiro ; Nishi, Hiroshi ; Takusagawa, Masahito ; Nishi, Hidetaka ; Takusagawa, M.
Author_Institution :
Fujitsu Laboratories, Ltd., Nakahara-ku, Kawasaki, Japan
fDate :
7/1/1979 12:00:00 AM
Abstract :
Threshold characteristics of stripe-geometry InGaAsP/InP double-heterostructure injection lasers have been analytically derived as a function of active layer thickness and stripe width. The effects of stripe width, refractive index in the active layer, diffusion of injected carriers, carrier lifetime, absorption loss in the cladding layer, gain coefficient, and cavity length on the optimum thickness of the active layer which gives minimum threshold or on threshold current density were studied. These lasers were fabricated on
Keywords :
Absorption; Charge carrier lifetime; DH-HEMTs; Fiber lasers; Indium phosphide; Laser theory; Optical fiber communication; Refractive index; Silicon compounds; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1979.1070063