Title :
Integrated double heterostructure Ga0.47In0.53As photoreceiver with automatic gain control
Author :
Barnard, Joseph ; Ohno, Hideo ; Wood, Colin E.C. ; Eastman, Lester F.
Author_Institution :
Cornell University, Ithaca, New York
fDate :
1/1/1981 12:00:00 AM
Abstract :
The first operation of an integrated differential notch-type photoconductor and dual gate (DG) double heterostructure (DH) MESFET in Ga0.47In0.53As is reported. The starting material was grown by molecular beam epitaxy on a semi-insulating InP substrate. A 2 mW HeNe laser with a spot diameter Of 0.5 mm could modulate the drain current by 300 µA with the upper gate suitably biased.
Keywords :
DH-HEMTs; Gain control; High speed optical techniques; Indium phosphide; MESFETs; Molecular beam epitaxial growth; Optical fiber losses; Photoconductivity; Photodetectors; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25320
