DocumentCode :
1076904
Title :
Modulation-doped MBE GaAs/n-AlxGa1-xAs MESFETs
Author :
Judaprawira, S. ; Wang, W.I. ; Chao, P.C. ; Wood, C.E.C. ; Woodard, D.W. ; Eastman, L.F.
Author_Institution :
Cornell University, Ithaca, NY, USA
Volume :
2
Issue :
1
fYear :
1981
fDate :
1/1/1981 12:00:00 AM
Firstpage :
14
Lastpage :
15
Abstract :
Modulation-doped GaAs/n-Al0.3Ga0.7As MESFETs have been fabricated. At 77 K, DC transconductance of 160 mS mm-1was observed, which is the highest transconductance value ever reported in this type of structure. The intrinsic transconductance was calculated to be 350 mSmm-1, and the corresponding average electron drift velocity is 1.8 × 107cm s-1, which demonstrates the real advantage of this type of device in high-speed applications.
Keywords :
Current-voltage characteristics; Electron mobility; Epitaxial layers; Gallium arsenide; Gold; MESFETs; Molecular beam epitaxial growth; Ohmic contacts; Substrates; Temperature;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1981.25322
Filename :
1481806
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1076904
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