Title :
Use of a High-Work-Function Ni Electrode to Improve the Stress Reliability of Analog SrTiO3 Metal–Insulator–Metal Capacitors
Author :
Chiang, K.C. ; Cheng, C.H. ; Jhou, K.Y. ; Pan, H.C. ; Hsiao, C.N. ; Chou, C.P. ; McAlister, S.P. ; Chin, Albert ; Hwang, H.L.
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Abstract :
We have studied the stress reliability of low-energy-bandgap high- metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation (DeltaC/C), the quadratic voltage coefficient of capacitance (VCC-alpha), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.
Keywords :
MIM devices; capacitors; electrodes; nickel; reliability; strontium compounds; Ni - Element; SrTiO3 - System; capacitance variation; carrier injection; degrading effects; electrode capacitors; high-work-function electrodes; low-energy- bandgap; metal-insulator-metal capacitors; quadratic voltage coefficient; stress reliability; Annealing; Capacitance; Degradation; Dielectric substrates; Electrodes; Leakage current; MIM capacitors; MIM devices; Stress; Voltage; $hbox{SrTiO}_{3}$ (STO); High work function; Ni; metal–insulator–metal (MIM); reliability;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.900876
