• DocumentCode
    1076926
  • Title

    Use of a High-Work-Function Ni Electrode to Improve the Stress Reliability of Analog SrTiO3 Metal–Insulator–Metal Capacitors

  • Author

    Chiang, K.C. ; Cheng, C.H. ; Jhou, K.Y. ; Pan, H.C. ; Hsiao, C.N. ; Chou, C.P. ; McAlister, S.P. ; Chin, Albert ; Hwang, H.L.

  • Author_Institution
    Nat. Chiao Tung Univ., Hsinchu
  • Volume
    28
  • Issue
    8
  • fYear
    2007
  • Firstpage
    694
  • Lastpage
    696
  • Abstract
    We have studied the stress reliability of low-energy-bandgap high- metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation (DeltaC/C), the quadratic voltage coefficient of capacitance (VCC-alpha), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.
  • Keywords
    MIM devices; capacitors; electrodes; nickel; reliability; strontium compounds; Ni - Element; SrTiO3 - System; capacitance variation; carrier injection; degrading effects; electrode capacitors; high-work-function electrodes; low-energy- bandgap; metal-insulator-metal capacitors; quadratic voltage coefficient; stress reliability; Annealing; Capacitance; Degradation; Dielectric substrates; Electrodes; Leakage current; MIM capacitors; MIM devices; Stress; Voltage; $hbox{SrTiO}_{3}$ (STO); High work function; Ni; metal–insulator–metal (MIM); reliability;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2007.900876
  • Filename
    4278351
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1076926