• DocumentCode
    1076951
  • Title

    High efficiency InGaAsP photovoltaic power converter

  • Author

    Law, H.D. ; Ng, W.W. ; Nakano, K. ; Dapkus, P.D. ; Stone, D.R.

  • Volume
    2
  • Issue
    2
  • fYear
    1981
  • fDate
    2/1/1981 12:00:00 AM
  • Firstpage
    26
  • Lastpage
    27
  • Abstract
    Photovoltaic power converters have been fabricated in the InGaAsP material system. The devices are optimized to convert monochromatic light at 1.06 µm. An extremely high conversion efficiency of 43% with antireflection coating has been achieved. The best device has an open circuit voltage of 0.73 V and a short circuit current of 4 mA when illuminating with 4.85 mW 1.06 µm Nd-Yag laser radiation. A saturation current density as low as 10-9A/cm2has been obtained. The fill factor of the cell is 0.72.
  • Keywords
    Absorption; Circuits; Energy conversion; Gallium arsenide; Indium phosphide; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Solar power generation; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25327
  • Filename
    1481811
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1076951