Title :
Ultrahigh-Speed 0.5 V Supply Voltage In0.7 Ga0.3As Quantum-Well Transistors on Silicon Substrate
Author :
Datta, Suman ; Dewey, G. ; Fastenau, J.M. ; Hudait, M.K. ; Loubychev, D. ; Liu, W.K. ; Radosavljevic, M. ; Rachmady, W. ; Chau, R.
Author_Institution :
Intel Corp., Hillsboro
Abstract :
The direct epitaxial growth of ultrahigh-mobility InGaAs/InAlAs quantum-well (QW) device layers onto silicon substrates using metamorphic buffer layers is demonstrated for the first time. In this letter, 80 nm physical gate length depletion-mode InGaAs QW transistors with saturated transconductance gm of 930 muS / mum and fT of 260 GHz at VDS = 0.5 V are achieved on 3.2 mum thick buffers. We expect that compound semiconductor-based advanced QW transistors could become available in the future as very high-speed and ultralow-power device technology for heterogeneous integration with the mainstream silicon CMOS.
Keywords :
III-V semiconductors; buffer layers; elemental semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; quantum well devices; semiconductor quantum wells; silicon; substrates; HEMT; In0.7Ga0.3As - Interface; Si - Surface; depletion-mode transistors; direct epitaxial growth; heterogeneous integration; metamorphic buffer layers; saturated transconductance; silicon substrate; size 80 nm; ultrahigh-mobility; ultrahigh-speed quantum-well transistors; voltage 0.5 V; Buffer layers; Epitaxial growth; Indium compounds; Indium gallium arsenide; Quantum well devices; Silicon; Substrates; Transconductance; Transistors; Voltage; Heterogeneous integration; III–V materials; InGaAs/InAlAs; low power; quantum-well (QW) devices; silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.902078
