Title :
Degradation of GaAs MESFETS in 18 megohm-cm H2O
Author :
Weitzel, C.E. ; Miers, T.H.
Author_Institution :
Semiconductor Research and Development Laboratories, Motorola, Inc., Phoenix, Arizona
fDate :
2/1/1981 12:00:00 AM
Abstract :
Rinsing GaAs MESFETs under illumination in 18 megohm-cm H2O is shown to rapidly degrade the dc characteristics of the device. H2O etches a trough around the Schottky barrier gate electrode with an etch rate of at least 22 Å/min. Formation of the trough significantly increases the parasitic resistances of the MESFET.
Keywords :
Degradation; Electrodes; Etching; Gallium arsenide; Lighting; MESFETs; Metallization; Noise figure; Schottky barriers; Semiconductor device noise;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25331
