Insulating Materials for Semiconductor Surfaces

A chart is given of comparative physical properties of silicon and the principal insulating films used with silicon, namely, silicon dioxide, silicon monoxide, silicon nitride, and aluminum oxide. The interplay of these physical characteristics is discussed. Included is a brief review of methods of forming these films, since the method of formation influences the physical properties of the final film. In the case of silicon dioxide, a comparison is also made between the amorphous or glassy state and the principal crystal form, ¿-quartz.