DocumentCode
1077032
Title
An electrochemical P-N junction etch-stop for the formation of silicon microstructures
Author
Jackson, T.N. ; Tischler, M.A. ; Wise, K.D.
Author_Institution
IBM Research Laboratories, Yorktown Heights, New York
Volume
2
Issue
2
fYear
1981
fDate
2/1/1981 12:00:00 AM
Firstpage
44
Lastpage
45
Abstract
An electrochemical technique allowing the protection of selected areas of silicon in ethylene diamine-based etchants is reported, and its application to the formation of silicon microstructures is described. Dissolution rates for passivated samples are less than 5 Å/minute, a factor of over 3000 times less than for unpassivated silicon.
Keywords
Boron; Electrons; Etching; Image sensors; Microstructure; P-n junctions; Passivation; Protection; Silicon; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1981.25334
Filename
1481818
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