Title :
Direct Electron-Beam Patterning of Teflon AF
Author :
Karre, Vijayasree ; Keathley, Phillip D. ; Guo, Jing ; Hastings, Jeffery T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Kentucky, Lexington, KY
fDate :
3/1/2009 12:00:00 AM
Abstract :
Teflon AF thin films have been directly patterned by electron-beam lithography without the need for chemical development. The pattern depth was found to be linearly related to exposure dose and increases with increasing film thickness. Features as small as 200 nm have been resolved. Fourier transform infrared measurements indicate that the electron-beam-induced patterning is related to degradation of the fluorinated dioxole group present in amorphous Teflon.
Keywords :
Fourier transform spectra; electron beam lithography; infrared spectra; nanopatterning; optical polymers; polymer films; surface structure; Fourier transform infrared measurements; Teflon AF thin films; direct electron-beam patterning; electron-beam lithography; film thickness; fluorinated dioxole group degradation; fluoropolymers; pattern depth; size 200 nm; surface relief structures; Direct patterning; electron-beam lithography; fluoropolymers;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2009.2013137
