• DocumentCode
    1077048
  • Title

    Defect Passivation by Selenium-Ion Implantation for Poly-Si Thin Film Transistors

  • Author

    Lai, Joanna ; Liu, Tsu-Jae King

  • Author_Institution
    California Univ., berkeley
  • Volume
    28
  • Issue
    8
  • fYear
    2007
  • Firstpage
    725
  • Lastpage
    727
  • Abstract
    Low-dose (1013 cm-2) selenium-ion implantation prior to pulsed-excimer-laser crystallization is investigated as a low-thermal-budget defect-passivation technique for polycrystalline silicon TFTs. Selenium defect passivation is found to be effective for improving TFT performance and for providing superior TFT reliability as compared with hydrogenation. Ion implantation, passivation, polycrystalline silicon (poly-Si), selenium (Se), thin-film transistor (TFT).
  • Keywords
    elemental semiconductors; ion implantation; selenium; semiconductor thin films; thin film transistors; Se - Element; Selenium-ion implantation; Si - Element; low-thermal-budget defect-passivation technique; poly-Si thin film transistors; pulsed-excimer-laser crystallization; Crystallization; Hydrogen; Lithography; Passivation; Plasma displays; Plasma temperature; Semiconductor films; Silicon compounds; Substrates; Thin film transistors; Ion implantation; passivation; polycrystalline silicon (poly-Si); selenium (Se); thin-film transistor (TFT);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2007.901275
  • Filename
    4278364
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1077048