Title :
Defect Passivation by Selenium-Ion Implantation for Poly-Si Thin Film Transistors
Author :
Lai, Joanna ; Liu, Tsu-Jae King
Author_Institution :
California Univ., berkeley
Abstract :
Low-dose (1013 cm-2) selenium-ion implantation prior to pulsed-excimer-laser crystallization is investigated as a low-thermal-budget defect-passivation technique for polycrystalline silicon TFTs. Selenium defect passivation is found to be effective for improving TFT performance and for providing superior TFT reliability as compared with hydrogenation. Ion implantation, passivation, polycrystalline silicon (poly-Si), selenium (Se), thin-film transistor (TFT).
Keywords :
elemental semiconductors; ion implantation; selenium; semiconductor thin films; thin film transistors; Se - Element; Selenium-ion implantation; Si - Element; low-thermal-budget defect-passivation technique; poly-Si thin film transistors; pulsed-excimer-laser crystallization; Crystallization; Hydrogen; Lithography; Passivation; Plasma displays; Plasma temperature; Semiconductor films; Silicon compounds; Substrates; Thin film transistors; Ion implantation; passivation; polycrystalline silicon (poly-Si); selenium (Se); thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.901275
