A Novel High-Speed Multiplexing IC Based on Resonant Tunneling Diodes

Author

Choi, Sunkyu ; Jeong, Yongsik ; Lee, Jongwon ; Yang, Kyounghoon

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea

Volume

8

Issue

4

fYear

2009

fDate

7/1/2009 12:00:00 AM

Firstpage

482

Lastpage

486

Abstract

A new multiplexing IC based on the resonant tunneling diode (RTD) is proposed. The unique negative differential resistance characteristics arising from quantum effects of the RTD enable us to develop a new functional low-power digital circuit. The proposed multiplexing IC consists of two current-mode-logic monostable-bistable transition logic elements (CML-MOBILEs) based on the RTD and a low-power selector circuit block. The proposed circuit has been fabricated by using an InP RTD/ heterojunction bipolar transistor monolithic microwave integrated circuit technology. The multiplexing operation of the fabricated quantum effect IC has been confirmed up to 45 Gb/s for the first time as a monolithic technology based on the quantum effect devices. The dc power consumption is only 23 mW, which is found to be one-fourth of the current state-of-the-art conventional transistor-based multiplexing IC.

Keywords

III-V semiconductors; consumer electronics; heterojunction bipolar transistors; indium compounds; microwave integrated circuits; multiplexing; resonant tunnelling diodes; bit rate 45 Gbit/s; current-mode-logic monostable-bistable transition logic elements; dc power consumption; heterojunction bipolar transistor; low-power digital circuit; monolithic microwave integrated circuit; multiplexing IC; negative differential resistance; power 23 mW; quantum effect; resonant tunneling diodes; Monostable–bistable logic element; multiplexing; quantum effect; resonant tunneling diode;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2009.2013462

Filename

4757289