DocumentCode :
107706
Title :
A Computational Study on the Electronic Transport Properties of Ultranarrow Disordered Zigzag Graphene Nanoribbons
Author :
Djavid, Nima ; Khaliji, Kaveh ; Tabatabaei, Sayed Mohamad ; Pourfath, Mahdi
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Tehran, Tehran, Iran
Volume :
61
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
23
Lastpage :
29
Abstract :
In this paper, the effect of structural nonidealities on the electronic transport properties of ultranarrow zigzag graphene nanoribbons (ZGNRs) is systemically investigated for the first time, employing the nonorthogonal third nearest neighbor mean-field Hubbard model along with the nonequilibrium Green´s function formalism. We have evaluated the influence of line-edge roughness, single atom vacancies, and substrate-induced potential fluctuations on the transport gap, ON-and OFF-state conductances, and the ON/OFF conductance ratio of 12-nm-length ultranarrow ZGNRs. The results reveal that while even moderate amounts of edge roughness lead to a nonuniform suppression of the transmission probability and increase the transport gap, the presence of single atom vacancies tends to decrease the induced transport gap. Furthermore, it is shown that the transport properties of ZGNRs are more robust against potential fluctuations compared with their armchair counterparts.
Keywords :
Green´s function methods; graphene; nanoribbons; vacancies (crystal); ON-OFF conductance ratio; ZGNRs; electronic transport properties; line-edge roughness; nonequilibrium Green´s function formalism; nonorthogonal third nearest neighbor mean-field Hubbard model; single atom vacancies; size 12 nm; structural nonideality effect; substrate-induced potential fluctuations; transmission probability; ultranarrow disordered zigzag graphene nanoribbons; Carbon; Charge carrier processes; Electric potential; Graphene; Impurities; Market research; Substrates; Line-edge roughness (LER); mean-field Hubbard model; nonequilibrium Green´s function (NEGF) formalism; single atom vacancy; substrate charged impurities; zigzag graphene nanoribbons (ZGNRs);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2290773
Filename :
6674078
Link To Document :
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