• DocumentCode
    107706
  • Title

    A Computational Study on the Electronic Transport Properties of Ultranarrow Disordered Zigzag Graphene Nanoribbons

  • Author

    Djavid, Nima ; Khaliji, Kaveh ; Tabatabaei, Sayed Mohamad ; Pourfath, Mahdi

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Tehran, Tehran, Iran
  • Volume
    61
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan. 2014
  • Firstpage
    23
  • Lastpage
    29
  • Abstract
    In this paper, the effect of structural nonidealities on the electronic transport properties of ultranarrow zigzag graphene nanoribbons (ZGNRs) is systemically investigated for the first time, employing the nonorthogonal third nearest neighbor mean-field Hubbard model along with the nonequilibrium Green´s function formalism. We have evaluated the influence of line-edge roughness, single atom vacancies, and substrate-induced potential fluctuations on the transport gap, ON-and OFF-state conductances, and the ON/OFF conductance ratio of 12-nm-length ultranarrow ZGNRs. The results reveal that while even moderate amounts of edge roughness lead to a nonuniform suppression of the transmission probability and increase the transport gap, the presence of single atom vacancies tends to decrease the induced transport gap. Furthermore, it is shown that the transport properties of ZGNRs are more robust against potential fluctuations compared with their armchair counterparts.
  • Keywords
    Green´s function methods; graphene; nanoribbons; vacancies (crystal); ON-OFF conductance ratio; ZGNRs; electronic transport properties; line-edge roughness; nonequilibrium Green´s function formalism; nonorthogonal third nearest neighbor mean-field Hubbard model; single atom vacancies; size 12 nm; structural nonideality effect; substrate-induced potential fluctuations; transmission probability; ultranarrow disordered zigzag graphene nanoribbons; Carbon; Charge carrier processes; Electric potential; Graphene; Impurities; Market research; Substrates; Line-edge roughness (LER); mean-field Hubbard model; nonequilibrium Green´s function (NEGF) formalism; single atom vacancy; substrate charged impurities; zigzag graphene nanoribbons (ZGNRs);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2013.2290773
  • Filename
    6674078