Anisotropic magnetotransport due to uniaxial magnetic anisotropy in (Ga,Mn)As wires

Author

Hamaya, K. ; Taniyama, T. ; Kitamoto, Y. ; Yamazaki, Y. ; Moriya, R. ; Munekata, H.

Author_Institution

Dept. of Innovative & Eng.ed Mater., Tokyo Inst. of Technol., Yokohama, Japan

Volume

40

Issue

4

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

2682

Lastpage

2684

Abstract

The in-plane anisotropic magnetotransport feature of 2-μm-wide (Ga,Mn)As wires is examined at 4 K. The magnetoresistance (MR) features as a function of applied field orientation show clear anisotropy associated with the cubic magnetocrystalline anisotropy. Moreover, the field orientation dependence of the magnetization switching field shows two asymmetric peaks along [110] and [1~10], indicating the presence of uniaxial anisotropy along [110]. A simple model incorporating the cubic and uniaxial anisotropies well explains these asymmetric peaks based on magnetization reversal processes via 90° domain wall displacement.

Keywords

III-V semiconductors; gallium arsenide; magnetic anisotropy; magnetic semiconductors; magnetisation reversal; magnetoresistance; manganese compounds; 4 K; 90° domain wall displacement; GaAs; GaAs wires; MnAs; MnAs wires; anisotropic magnetotransport; cubic magnetocrystalline anisotropy; field orientation dependence; magnetic semiconductor; magnetization reversal; magnetization switching field; magnetoresistance; uniaxial magnetic anisotropy; Anisotropic magnetoresistance; Magnetic anisotropy; Magnetic domain walls; Magnetic domains; Magnetic field measurement; Magnetic semiconductors; Magnetic switching; Perpendicular magnetic anisotropy; Saturation magnetization; Wires; Magnetic anisotropy; magnetic semiconductor; magnetoresistance;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2004.832667

Filename

1325608