DocumentCode :
1077090
Title :
On the relation between threshold current and interface recombination velocities in double-heterojunction lasers
Author :
van Opdorp, C. ; Veenvliet, H.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
Volume :
15
Issue :
8
fYear :
1979
fDate :
8/1/1979 12:00:00 AM
Firstpage :
817
Lastpage :
821
Abstract :
In a light-emitting double-heterojunction structure, interface recombination reduces the quantum efficiency of spontaneous emission 
; more specifically, in a double-heterojunction laser this increases the threshold current density Jth . Simplified expressions are derived here for the dependence of and Jth on interface recombination velocities in the injection regimes of both 
(or 
) and 
. Easy-to-handle criteria are presented for checking the validity of the simplifications when using these expressions for evaluating the recombination velocities from experimental data.
; more specifically, in a double-heterojunction laser this increases the threshold current density J and J (or ) and . Easy-to-handle criteria are presented for checking the validity of the simplifications when using these expressions for evaluating the recombination velocities from experimental data.Keywords :
Charge carrier processes; Semiconductor lasers; Carrier confinement; Charge carriers; Differential equations; Nonlinear equations; Nonlinear optics; Radiative recombination; Spontaneous emission; Stimulated emission; Threshold current; Writing;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1979.1070081
Filename :
1070081
Link To Document :
