A Temperature-Stable Film Bulk Acoustic Wave Oscillator

Author

Pang, Wei ; Ruby, Rich C. ; Parker, Reed ; Fisher, Philip W. ; Unkrich, Mark A. ; Larson, John D.

Author_Institution

Avago Technol., Inc., San Jose

Volume

29

Issue

4

fYear

2008

fDate

4/1/2008 12:00:00 AM

Firstpage

315

Lastpage

318

Abstract

This letter reports a passively temperature-compensated CMOS oscillator utilizing a film bulk acoustic resonator. The resonator exhibiting an f ldr Q product of 2-4 X 10¹² s^-1 is composed of molybdenum, aluminum nitride, and a compensation material that has a positive temperature coefficient of Young´s modulus. The 604-MHz oscillator consumes 5.3 mW from a 3.3-V supply and achieves excellent phase noise performances of -102, -130, and -149 dBc/Hz at 1, 10, and 100 kHz carrier offsets, respectively. The oscillator´s temperature-dependent frequency drift is less than 80 ppm over a temperature range of -35degC to +85degC.

Keywords

CMOS integrated circuits; Young´s modulus; acoustic resonators; bulk acoustic wave devices; compensation; oscillators; phase noise; Young´s modulus; compensation material; film bulk acoustic resonator; frequency 604 MHz; passively temperature-compensated CMOS oscillator; phase noise; power 5.3 mW; temperature -35 C to 85 C; temperature-stable film bulk acoustic wave oscillator; voltage 3.3 V; Film bulk acoustic resonator (FBAR); nonlinearity; oscillator; phase noise; temperature compensation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.917116

Filename

4455576