DocumentCode
1077112
Title
Oxide defined TJS lasers in InGaAsP/InP DH structures
Author
Bull, D.J. ; Patel, Navin B. ; Prince, F.C. ; Nannichi, Y.
Author_Institution
Universidade Estadual de Campinas, Instituto de Física "Gleb Wataghin," Campinas, Brazil
Volume
15
Issue
8
fYear
1979
fDate
8/1/1979 12:00:00 AM
Firstpage
710
Lastpage
713
Abstract
Transverse junction stripe lasers in the InGaAsP-InP systems have been fabricated by Zn diffusion through oxide windows into DH structures of InGaAsP/InP with all epitaxial layers n-type. The quaternary layer composition is such that room temperature laser emission is at 1.18 μm. TJS laser mode behavior with accompanying single longitudinal mode operation and kink-free light-output characteristics are seen at 77 K. As the temperature is increased, this behavior persists up to about 130 K, when parallel electron injection through the p-n junction in the InP layers becomes so large that, in parallel with the TJS laser filament, a normally operating DH laser filament starts operating. At higher temperatures only the latter is seen to operate.
Keywords
Gallium materials/lasers; Infrared lasers; DH-HEMTs; Electrons; Epitaxial layers; Indium phosphide; Laser modes; P-n junctions; Substrates; Temperature; Tin; Zinc;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1979.1070083
Filename
1070083
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