• DocumentCode
    1077128
  • Title

    High cut-off frequency InP MESFET

  • Author

    Imai, Yuhki ; Ishibashi, Tadao ; Ida, Masao

  • Author_Institution
    Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
  • Volume
    2
  • Issue
    3
  • fYear
    1981
  • fDate
    3/1/1981 12:00:00 AM
  • Firstpage
    67
  • Lastpage
    69
  • Abstract
    An InP MESFET with a 0.8 µm gate length has been fabricated utilizing an active layer grown by LPE on an Fe-doped substrate. The dc transconductance was 22 mS/200 µm and the gain-bandwidth product fThad a high value of about 40 GHz. The high value of fTis mainly due to the high saturation velocity in the channel, which was extimated to be 2.8 × 107cm/s.
  • Keywords
    Cutoff frequency; Etching; FETs; Fabrication; Gallium arsenide; Indium phosphide; MESFETs; Substrates; Surface treatment; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25343
  • Filename
    1481827
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1077128