Title :
High cut-off frequency InP MESFET
Author :
Imai, Yuhki ; Ishibashi, Tadao ; Ida, Masao
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
fDate :
3/1/1981 12:00:00 AM
Abstract :
An InP MESFET with a 0.8 µm gate length has been fabricated utilizing an active layer grown by LPE on an Fe-doped substrate. The dc transconductance was 22 mS/200 µm and the gain-bandwidth product fThad a high value of about 40 GHz. The high value of fTis mainly due to the high saturation velocity in the channel, which was extimated to be 2.8 × 107cm/s.
Keywords :
Cutoff frequency; Etching; FETs; Fabrication; Gallium arsenide; Indium phosphide; MESFETs; Substrates; Surface treatment; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25343
