Title :
Continuously clocked 1 GHz GaAs CCD
Author :
Deyhimy, I. ; Hill, W.A. ; Anderson, R.J.
Author_Institution :
Vedette Energy Research, Inc., Newbury Park, CA
fDate :
3/1/1981 12:00:00 AM
Abstract :
The continuously clocked operation of a buried channel, Schottky-barrier gate GaAs CCD is described at clock frequencies in excess of 1 GHz. A charge transfer efficiency of >0.9999 per transfer is measured at low frequency and 0.994 per transfer at 1 GHz. It is postulated that the high frequency transfer efficiency is a limitation of the equipment.
Keywords :
Charge coupled devices; Charge measurement; Charge transfer; Charge-coupled image sensors; Clocks; Current measurement; Frequency measurement; Gallium arsenide; Silicon; Surface acoustic wave devices;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25344
