Title :
Inversion-mode insulated gate Ga0.47In0.53As field-effect transistors
Author :
Wieder, H.H. ; Clawson, A.R. ; Elder, D.I. ; Collins, D.A.
Author_Institution :
Naval Ocean Systems Center, San Diego, California
fDate :
3/1/1981 12:00:00 AM
Abstract :
It is demonstrated that inversion-mode n-channel insulated gate field-effect transistors can be made of p-type heteroepitaxially-grown Ga0.47In0.53As layers on semi-insulating InP.
Keywords :
Dielectrics; Epitaxial layers; FETs; Indium phosphide; Insulation; Ocean temperature; Plasma temperature; Silicon alloys; Substrates; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25345
