DocumentCode
1077180
Title
Impact of Parameter Variations and Random Dopant Fluctuations on Short-Channel Fully Depleted SOI MOSFETs With Extremely Thin BOX
Author
Ohtou, Tetsu ; Sugii, Nobuyuki ; Hiramoto, Toshiro
Author_Institution
Tokyo Univ., Tokyo
Volume
28
Issue
8
fYear
2007
Firstpage
740
Lastpage
742
Abstract
Characteristic variations of fully depleted silicon-on-insulator (SOI) MOSFETs with extremely thin buried oxide are examined by device simulations. It is found, for the first time, that a SOI device with low channel impurity concentration and high substrate concentration has high immunity to both parameter variations and random dopant fluctuations (RDFs). Fully depleted (FD) silicon-on-insulator (SOI) MOSFET, random dopant fluctuation (RDF), thin buried oxide (BOX), variability.
Keywords
MOSFET; silicon-on-insulator; substrates; buried oxide; channel impurity concentration; fully depleted SOI MOSFET; parameter variations; random dopant fluctuations; substrate concentration; Doping; Educational technology; Fluctuations; Government; Impurities; MOSFETs; Resource description framework; Silicon on insulator technology; Size control; Substrates; Fully depleted (FD) silicon-on-insulator (SOI) MOSFET; random dopant fluctuation (RDF); thin buried oxide (BOX); variability;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2007.901276
Filename
4278377
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