DocumentCode
1077183
Title
Zn-diffused, stripe-geometry, double-heterostructure GaInAsP/InP diode lasers
Author
Hsieh, Jaw Jim
Author_Institution
Massachusetts Institute of Technology, Lexington, MA, USA
Volume
15
Issue
8
fYear
1979
fDate
8/1/1979 12:00:00 AM
Firstpage
694
Lastpage
697
Abstract
Deep Zn diffusion from a ZnP2 source has been used to fabricate stripe-geometry double-heterostructure GaInAsP/InP diode lasers with emission wavelengths in the 
m range. These devices exhibit good electrical and optical confinement. For sufficiently narrow stripe widths ( 
m), emission is usually single mode and linear. CW outputs up to ∼8 mW per facet have been observed. In initial life tests, two Zn-diffused lasers have operated CW at room temperature for over 5000 h without appreciable degradation.
m range. These devices exhibit good electrical and optical confinement. For sufficiently narrow stripe widths ( m), emission is usually single mode and linear. CW outputs up to ∼8 mW per facet have been observed. In initial life tests, two Zn-diffused lasers have operated CW at room temperature for over 5000 h without appreciable degradation.Keywords
CW lasers; Gallium materials/lasers; Infrared lasers; Buffer layers; Coatings; DH-HEMTs; Degradation; Diode lasers; Indium phosphide; Laser modes; Optical buffering; Stimulated emission; Zinc;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1979.1070090
Filename
1070090
Link To Document