DocumentCode :
1077183
Title :
Zn-diffused, stripe-geometry, double-heterostructure GaInAsP/InP diode lasers
Author :
Hsieh, Jaw Jim
Author_Institution :
Massachusetts Institute of Technology, Lexington, MA, USA
Volume :
15
Issue :
8
fYear :
1979
fDate :
8/1/1979 12:00:00 AM
Firstpage :
694
Lastpage :
697
Abstract :
Deep Zn diffusion from a ZnP2 source has been used to fabricate stripe-geometry double-heterostructure GaInAsP/InP diode lasers with emission wavelengths in the 
m range. These devices exhibit good electrical and optical confinement. For sufficiently narrow stripe widths ( 
m), emission is usually single mode and linear. CW outputs up to ∼8 mW per facet have been observed. In initial life tests, two Zn-diffused lasers have operated CW at room temperature for over 5000 h without appreciable degradation.
m range. These devices exhibit good electrical and optical confinement. For sufficiently narrow stripe widths ( m), emission is usually single mode and linear. CW outputs up to ∼8 mW per facet have been observed. In initial life tests, two Zn-diffused lasers have operated CW at room temperature for over 5000 h without appreciable degradation.Keywords :
CW lasers; Gallium materials/lasers; Infrared lasers; Buffer layers; Coatings; DH-HEMTs; Degradation; Diode lasers; Indium phosphide; Laser modes; Optical buffering; Stimulated emission; Zinc;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1979.1070090
Filename :
1070090
Link To Document :
